P-Channel MOSFET, 100 A, 60 V, 5-Pin DFN onsemi NVMFS5A160PLZWFT1G

RS noliktavas nr.: 178-4397Ražotājs: onsemiRažotāja kods: NVMFS5A160PLZWFT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Number of Elements per Chip

1

Width

6.1mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

1.05mm

Izcelsmes valsts

Malaysia

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,35

Katrs (Rulli ir 1500) (bez PVN)

€ 2,844

Katrs (Rulli ir 1500) (Ieskaitot PVN)

P-Channel MOSFET, 100 A, 60 V, 5-Pin DFN onsemi NVMFS5A160PLZWFT1G

€ 2,35

Katrs (Rulli ir 1500) (bez PVN)

€ 2,844

Katrs (Rulli ir 1500) (Ieskaitot PVN)

P-Channel MOSFET, 100 A, 60 V, 5-Pin DFN onsemi NVMFS5A160PLZWFT1G
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
1500 - 6000€ 2,35€ 3 525,00
7500+€ 2,30€ 3 450,00

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Number of Elements per Chip

1

Width

6.1mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

1.05mm

Izcelsmes valsts

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more