Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLT1GOS

RS noliktavas nr.: 195-2668Ražotājs: onsemiRažotāja kods: NVMFD6H840NLT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

74 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

5.1mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1.05mm

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,35

Katrs (Rulli ir 1500) (bez PVN)

€ 1,634

Katrs (Rulli ir 1500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLT1GOS

€ 1,35

Katrs (Rulli ir 1500) (bez PVN)

€ 1,634

Katrs (Rulli ir 1500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLT1GOS
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

74 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

5.1mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1.05mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more