Dual P-Channel MOSFET, 430 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3152PT1G

RS noliktavas nr.: 163-1144Ražotājs: onsemiRažotāja kods: NTZD3152PT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Width

1.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

1.7 nC @ 4.5 V

Height

0.6mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,079

Katrs (Rulli ir 4000) (bez PVN)

€ 0,096

Katrs (Rulli ir 4000) (Ieskaitot PVN)

Dual P-Channel MOSFET, 430 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3152PT1G

€ 0,079

Katrs (Rulli ir 4000) (bez PVN)

€ 0,096

Katrs (Rulli ir 4000) (Ieskaitot PVN)

Dual P-Channel MOSFET, 430 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3152PT1G
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Width

1.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

1.7 nC @ 4.5 V

Height

0.6mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more