Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
430 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.7mm
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,079
Katrs (Rulli ir 4000) (bez PVN)
€ 0,096
Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
€ 0,079
Katrs (Rulli ir 4000) (bez PVN)
€ 0,096
Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
430 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.7mm
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts