Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,372
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,45
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
25
€ 0,372
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,45
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Lente |
---|---|---|
25 - 25 | € 0,372 | € 9,30 |
50 - 100 | € 0,264 | € 6,60 |
125 - 225 | € 0,173 | € 4,32 |
250+ | € 0,156 | € 3,90 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Produkta apraksts