onsemi N-Channel MOSFET, 2.2 A, 60 V, 3-Pin SOT-23 NTR5198NLT1G

RS noliktavas nr.: 796-1381Ražotājs: onsemiRažotāja kods: NTR5198NLT1G
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Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

5.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 4,25

€ 0,17 Katrs (Paka ir 25) (bez PVN)

€ 5,14

€ 0,206 Katrs (Paka ir 25) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 2.2 A, 60 V, 3-Pin SOT-23 NTR5198NLT1G
Izvēlēties iepakojuma veidu

€ 4,25

€ 0,17 Katrs (Paka ir 25) (bez PVN)

€ 5,14

€ 0,206 Katrs (Paka ir 25) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 2.2 A, 60 V, 3-Pin SOT-23 NTR5198NLT1G

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cenaPer Iepakojums
25 - 75€ 0,17€ 4,25
100 - 225€ 0,147€ 3,68
250 - 475€ 0,127€ 3,18
500 - 975€ 0,112€ 2,80
1000+€ 0,102€ 2,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

5.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more