Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
5.1 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 4,25
€ 0,17 Katrs (Paka ir 25) (bez PVN)
€ 5,14
€ 0,206 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 4,25
€ 0,17 Katrs (Paka ir 25) (bez PVN)
€ 5,14
€ 0,206 Katrs (Paka ir 25) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 75 | € 0,17 | € 4,25 |
100 - 225 | € 0,147 | € 3,68 |
250 - 475 | € 0,127 | € 3,18 |
500 - 975 | € 0,112 | € 2,80 |
1000+ | € 0,102 | € 2,55 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
5.1 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Produkta apraksts