N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi NTR5103NT1G

RS noliktavas nr.: 184-1068Ražotājs: onsemiRažotāja kods: NTR5103NT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.9V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.81 nC @ 5 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,037

Katrs (Rulli ir 3000) (bez PVN)

€ 0,045

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi NTR5103NT1G

€ 0,037

Katrs (Rulli ir 3000) (bez PVN)

€ 0,045

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi NTR5103NT1G
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
3000 - 6000€ 0,037€ 111,00
9000 - 21000€ 0,031€ 93,00
24000 - 42000€ 0,027€ 81,00
45000 - 96000€ 0,025€ 75,00
99000+€ 0,023€ 69,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.9V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.81 nC @ 5 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more