N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 onsemi NTR4170NT1G

RS noliktavas nr.: 184-1067Ražotājs: onsemiRažotāja kods: NTR4170NT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

480 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

4.76 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,121

Katrs (Rulli ir 3000) (bez PVN)

€ 0,146

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 onsemi NTR4170NT1G

€ 0,121

Katrs (Rulli ir 3000) (bez PVN)

€ 0,146

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 onsemi NTR4170NT1G
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

480 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

4.76 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more