Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Produkta apraksts
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 9,50
€ 0,19 Katrs (tiek piegadats Lente) (bez PVN)
€ 11,50
€ 0,23 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
50
€ 9,50
€ 0,19 Katrs (tiek piegadats Lente) (bez PVN)
€ 11,50
€ 0,23 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
50
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Lente |
---|---|---|
50 - 50 | € 0,19 | € 9,50 |
100 - 200 | € 0,081 | € 4,05 |
250 - 450 | € 0,078 | € 3,90 |
500 - 950 | € 0,076 | € 3,80 |
1000+ | € 0,072 | € 3,60 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Produkta apraksts