onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G

RS noliktavas nr.: 790-5274Ražotājs: onsemiRažotāja kods: NTR2101PT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Produkta apraksts

P-Channel Power MOSFET, 8V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 9,50

€ 0,19 Katrs (tiek piegadats Lente) (bez PVN)

€ 11,50

€ 0,23 Katrs (tiek piegadats Lente) (Ieskaitot PVN)

onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G
Izvēlēties iepakojuma veidu

€ 9,50

€ 0,19 Katrs (tiek piegadats Lente) (bez PVN)

€ 11,50

€ 0,23 Katrs (tiek piegadats Lente) (Ieskaitot PVN)

onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cenaPer Lente
50 - 50€ 0,19€ 9,50
100 - 200€ 0,081€ 4,05
250 - 450€ 0,078€ 3,90
500 - 950€ 0,076€ 3,80
1000+€ 0,072€ 3,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Produkta apraksts

P-Channel Power MOSFET, 8V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt