Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
2.5 nC @ 5 V
Minimum Operating Temperature
-55 °C
Height
0.94mm
Produkta apraksts
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,364
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,44
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
2
€ 0,364
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,44
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
2
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
2 - 98 | € 0,364 | € 0,73 |
100 - 198 | € 0,351 | € 0,70 |
200 - 498 | € 0,286 | € 0,57 |
500 - 998 | € 0,273 | € 0,55 |
1000+ | € 0,254 | € 0,51 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
2.5 nC @ 5 V
Minimum Operating Temperature
-55 °C
Height
0.94mm
Produkta apraksts