P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02G

RS noliktavas nr.: 688-9143Ražotājs: onsemiRažotāja kods: NTR1P02T1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

2.5 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

0.94mm

Produkta apraksts

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,358

Katrs (Paka ir 2) (bez PVN)

€ 0,433

Katrs (Paka ir 2) (Ieskaitot PVN)

P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02G
Izvēlēties iepakojuma veidu

€ 0,358

Katrs (Paka ir 2) (bez PVN)

€ 0,433

Katrs (Paka ir 2) (Ieskaitot PVN)

P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
2 - 98€ 0,358€ 0,72
100 - 198€ 0,345€ 0,69
200 - 498€ 0,281€ 0,56
500 - 998€ 0,268€ 0,54
1000+€ 0,249€ 0,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

2.5 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

0.94mm

Produkta apraksts

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more