N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 onsemi NTPF082N65S3F

RS noliktavas nr.: 178-4258Ražotājs: onsemiRažotāja kods: NTPF082N65S3F
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.9mm

Maximum Operating Temperature

+150 °C

Length

10.63mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Number of Elements per Chip

1

Height

16.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 5,70

Katrs (Tubina ir 50) (bez PVN)

€ 6,897

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 onsemi NTPF082N65S3F

€ 5,70

Katrs (Tubina ir 50) (bez PVN)

€ 6,897

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 onsemi NTPF082N65S3F
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 5,70€ 285,00
100+€ 5,40€ 270,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.9mm

Maximum Operating Temperature

+150 °C

Length

10.63mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Number of Elements per Chip

1

Height

16.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more