N-Channel MOSFET, 63 A, 60 V, 3-Pin TO-220 onsemi NTP5864NG

RS noliktavas nr.: 802-4082PRažotājs: onsemiRažotāja kods: NTP5864NG
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.28mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Width

15.75mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.82mm

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,976

Katrs (tiek piegadats Tubina) (bez PVN)

€ 1,181

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

N-Channel MOSFET, 63 A, 60 V, 3-Pin TO-220 onsemi NTP5864NG
Izvēlēties iepakojuma veidu

€ 0,976

Katrs (tiek piegadats Tubina) (bez PVN)

€ 1,181

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

N-Channel MOSFET, 63 A, 60 V, 3-Pin TO-220 onsemi NTP5864NG
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
20 - 80€ 0,976€ 19,52
100 - 240€ 0,732€ 14,64
260 - 480€ 0,711€ 14,22
500 - 980€ 0,621€ 12,42
1000+€ 0,504€ 10,08

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.28mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Width

15.75mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.82mm

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more