N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS7D3N04CLTWG
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
7 nC @ 4.5 V
Width
4.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,40
Katrs (Rulli ir 3000) (bez PVN)
€ 1,694
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 1,40
Katrs (Rulli ir 3000) (bez PVN)
€ 1,694
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
7 nC @ 4.5 V
Width
4.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products