onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG

RS noliktavas nr.: 189-0485Ražotājs: onsemiRažotāja kods: NTMJS0D9N04CLTWG
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Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

330 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.9mm

Length

5mm

Typical Gate Charge @ Vgs

143 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

1.2mm

Minimum Operating Temperature

-55 °C

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Noliktavas stāvoklis patreiz nav pieejams

€ 13,25

€ 2,65 Katrs (Paka ir 5) (bez PVN)

€ 16,03

€ 3,206 Katrs (Paka ir 5) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
Izvēlēties iepakojuma veidu

€ 13,25

€ 2,65 Katrs (Paka ir 5) (bez PVN)

€ 16,03

€ 3,206 Katrs (Paka ir 5) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 2,65€ 13,25
50 - 95€ 2,30€ 11,50
100+€ 2,00€ 10,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

330 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.9mm

Length

5mm

Typical Gate Charge @ Vgs

143 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

1.2mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more