Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC onsemi NTMD4N03G

RS noliktavas nr.: 163-1128Ražotājs: onsemiRažotāja kods: NTMD4N03R2G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

8 nC @ 10 V dc

Height

1.5mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Philippines

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,306

Katrs (Rulli ir 2500) (bez PVN)

€ 0,37

Katrs (Rulli ir 2500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC onsemi NTMD4N03G

€ 0,306

Katrs (Rulli ir 2500) (bez PVN)

€ 0,37

Katrs (Rulli ir 2500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC onsemi NTMD4N03G
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

8 nC @ 10 V dc

Height

1.5mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Philippines

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more