Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG

RS noliktavas nr.: 124-5405Ražotājs: onsemiRažotāja kods: NTLJD4116NT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Maximum Gate Source Voltage

-8 V, +8 V

Width

2mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Height

0.75mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,35

Katrs (Rulli ir 3000) (bez PVN)

€ 0,424

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG

€ 0,35

Katrs (Rulli ir 3000) (bez PVN)

€ 0,424

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Maximum Gate Source Voltage

-8 V, +8 V

Width

2mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Height

0.75mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more