Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Maximum Gate Source Voltage
-8 V, +8 V
Width
2mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Height
0.75mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,35
Katrs (Rulli ir 3000) (bez PVN)
€ 0,424
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,35
Katrs (Rulli ir 3000) (bez PVN)
€ 0,424
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Maximum Gate Source Voltage
-8 V, +8 V
Width
2mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Height
0.75mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts