P-Channel MOSFET, 870 mA, 20 V, 3-Pin SOT-723 onsemi NTK3139PG

RS noliktavas nr.: 780-0642Ražotājs: onsemiRažotāja kods: NTK3139PT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

870 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

550 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.25mm

Width

0.85mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.55mm

Produkta apraksts

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,18

Katrs (Paka ir 50) (bez PVN)

€ 0,218

Katrs (Paka ir 50) (Ieskaitot PVN)

P-Channel MOSFET, 870 mA, 20 V, 3-Pin SOT-723 onsemi NTK3139PG
Izvēlēties iepakojuma veidu

€ 0,18

Katrs (Paka ir 50) (bez PVN)

€ 0,218

Katrs (Paka ir 50) (Ieskaitot PVN)

P-Channel MOSFET, 870 mA, 20 V, 3-Pin SOT-723 onsemi NTK3139PG
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
50 - 200€ 0,18€ 9,00
250+€ 0,077€ 3,85

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

870 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

550 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.25mm

Width

0.85mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.55mm

Produkta apraksts

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more