Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,112
Katrs (Rulli ir 3000) (bez PVN)
€ 0,136
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,112
Katrs (Rulli ir 3000) (bez PVN)
€ 0,136
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts