onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Length
2.2mm
Width
1.35mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 97.80
€ 0.163 Each (Supplied on a Reel) (Exc. Vat)
€ 118.34
€ 0.197 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
600
€ 97.80
€ 0.163 Each (Supplied on a Reel) (Exc. Vat)
€ 118.34
€ 0.197 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
600
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 600 - 1450 | € 0.163 | € 8.15 |
| 1500+ | € 0.126 | € 6.30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Length
2.2mm
Width
1.35mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products