N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 onsemi NTHL110N65S3F

RS noliktavas nr.: 178-4256Ražotājs: onsemiRažotāja kods: NTHL110N65S3F
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

240 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 5,80

Katrs (Tubina ir 30) (bez PVN)

€ 7,018

Katrs (Tubina ir 30) (Ieskaitot PVN)

N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 onsemi NTHL110N65S3F

€ 5,80

Katrs (Tubina ir 30) (bez PVN)

€ 7,018

Katrs (Tubina ir 30) (Ieskaitot PVN)

N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 onsemi NTHL110N65S3F
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
30 - 90€ 5,80€ 174,00
120 - 240€ 5,10€ 153,00
270 - 480€ 4,95€ 148,50
510 - 990€ 4,80€ 144,00
1020+€ 4,70€ 141,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

240 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more