Dual N-Channel MOSFET, 3.9 A, 30 V, 8-Pin ChipFET onsemi NTHD4502NG
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
30 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Number of Elements per Chip
2
Transistor Material
Si
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,276
Katrs (Rulli ir 3000) (bez PVN)
€ 0,334
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,276
Katrs (Rulli ir 3000) (bez PVN)
€ 0,334
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
30 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Number of Elements per Chip
2
Transistor Material
Si
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products