Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 21,78
€ 0,871 Katrs (tiek piegadats Lente) (bez PVN)
€ 26,35
€ 1,054 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
25
€ 21,78
€ 0,871 Katrs (tiek piegadats Lente) (bez PVN)
€ 26,35
€ 1,054 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Lente |
---|---|---|
25 - 75 | € 0,871 | € 21,78 |
100 - 225 | € 0,751 | € 18,78 |
250+ | € 0,651 | € 16,28 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts