Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
3.13 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.65mm
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,809
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,979
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
25
€ 0,809
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,979
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
25
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
3.13 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.65mm
Produkta apraksts