Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±6 V
Length
1.7mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Width
0.95mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Automotive Standard
AEC-Q101
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,064
Katrs (Rulli ir 3000) (bez PVN)
€ 0,077
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,064
Katrs (Rulli ir 3000) (bez PVN)
€ 0,077
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±6 V
Length
1.7mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Width
0.95mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Automotive Standard
AEC-Q101
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V