N-Channel MOSFET, 915 mA, 20 V, 3-Pin SOT-523 onsemi NTE4153NT1G

RS noliktavas nr.: 184-1063Ražotājs: onsemiRažotāja kods: NTE4153NT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

915 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±6 V

Length

1.7mm

Typical Gate Charge @ Vgs

1.82 nC @ 4.5 V

Width

0.95mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Automotive Standard

AEC-Q101

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,064

Katrs (Rulli ir 3000) (bez PVN)

€ 0,077

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 915 mA, 20 V, 3-Pin SOT-523 onsemi NTE4153NT1G

€ 0,064

Katrs (Rulli ir 3000) (bez PVN)

€ 0,077

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 915 mA, 20 V, 3-Pin SOT-523 onsemi NTE4153NT1G
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

915 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±6 V

Length

1.7mm

Typical Gate Charge @ Vgs

1.82 nC @ 4.5 V

Width

0.95mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Automotive Standard

AEC-Q101

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more