Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
160 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
120 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Width
6.22mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Forward Diode Voltage
1.2V
Height
2.25mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Vietnam
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,30
Katrs (Rulli ir 2500) (bez PVN)
€ 6,413
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 5,30
Katrs (Rulli ir 2500) (bez PVN)
€ 6,413
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
160 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
120 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Width
6.22mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Forward Diode Voltage
1.2V
Height
2.25mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Vietnam