Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Produkta apraksts
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,868
Katrs (Paka ir 5) (bez PVN)
€ 1,05
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,868
Katrs (Paka ir 5) (bez PVN)
€ 1,05
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 0,868 | € 4,34 |
50 - 120 | € 0,712 | € 3,56 |
125 - 245 | € 0,694 | € 3,47 |
250 - 495 | € 0,656 | € 3,28 |
500+ | € 0,61 | € 3,05 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Produkta apraksts