Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
104 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
7.4 nC @ 5 V
Maximum Operating Temperature
+175 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Czech Republic
Produkta apraksts
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 1 197,50
€ 0,479 Katrs (Rulli ir 2500) (bez PVN)
€ 1 448,98
€ 0,58 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 1 197,50
€ 0,479 Katrs (Rulli ir 2500) (bez PVN)
€ 1 448,98
€ 0,58 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
104 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
7.4 nC @ 5 V
Maximum Operating Temperature
+175 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Czech Republic
Produkta apraksts