onsemi N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD3055L104T4G

RS noliktavas nr.: 100-8063Ražotājs: onsemiRažotāja kods: NTD3055L104T4G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

104 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

7.4 nC @ 5 V

Maximum Operating Temperature

+175 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Czech Republic

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 1 197,50

€ 0,479 Katrs (Rulli ir 2500) (bez PVN)

€ 1 448,98

€ 0,58 Katrs (Rulli ir 2500) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD3055L104T4G

€ 1 197,50

€ 0,479 Katrs (Rulli ir 2500) (bez PVN)

€ 1 448,98

€ 0,58 Katrs (Rulli ir 2500) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD3055L104T4G
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

104 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

7.4 nC @ 5 V

Maximum Operating Temperature

+175 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Czech Republic

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more