Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
6.35mm
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 9,53
€ 0,953 Katrs (Paka ir 10) (bez PVN)
€ 11,53
€ 1,153 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 9,53
€ 0,953 Katrs (Paka ir 10) (bez PVN)
€ 11,53
€ 1,153 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 0,953 | € 9,53 |
100 - 240 | € 0,927 | € 9,27 |
250 - 990 | € 0,90 | € 9,00 |
1000+ | € 0,88 | € 8,80 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
6.35mm
Produkta apraksts