P-Channel MOSFET, 18.5 A, 60 V, 3-Pin D2PAK onsemi NTB5605PG

RS Stock No.: 802-0998PBrand: onsemiManufacturers Part No.: NTB5605PT4G
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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

18.5 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.29mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

13 nC @ 4.5 V

Width

9.65mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.83mm

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 24.00

€ 1.20 Each (Supplied on a Reel) (Exc. Vat)

€ 29.04

€ 1.452 Each (Supplied on a Reel) (inc. VAT)

P-Channel MOSFET, 18.5 A, 60 V, 3-Pin D2PAK onsemi NTB5605PG
Select packaging type

€ 24.00

€ 1.20 Each (Supplied on a Reel) (Exc. Vat)

€ 29.04

€ 1.452 Each (Supplied on a Reel) (inc. VAT)

P-Channel MOSFET, 18.5 A, 60 V, 3-Pin D2PAK onsemi NTB5605PG

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Reel
20 - 90€ 1.20€ 12.00
100 - 240€ 0.981€ 9.81
250 - 490€ 0.936€ 9.36
500+€ 0.868€ 8.68

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

18.5 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.29mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

13 nC @ 4.5 V

Width

9.65mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.83mm

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more