P-Channel MOSFET, 760 mA, 20 V, 3-Pin SC-75 onsemi NTA4151PG

RS noliktavas nr.: 780-0504PRažotājs: onsemiRažotāja kods: NTA4151PT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Width

0.9mm

Transistor Material

Si

Length

1.65mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.8mm

Produkta apraksts

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,315

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,381

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

P-Channel MOSFET, 760 mA, 20 V, 3-Pin SC-75 onsemi NTA4151PG
Izvēlēties iepakojuma veidu

€ 0,315

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,381

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

P-Channel MOSFET, 760 mA, 20 V, 3-Pin SC-75 onsemi NTA4151PG
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
50 - 550€ 0,315€ 15,75
600 - 1450€ 0,152€ 7,60
1500+€ 0,132€ 6,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Width

0.9mm

Transistor Material

Si

Length

1.65mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.8mm

Produkta apraksts

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more