ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23

RS noliktavas nr.: 163-0963Ražotājs: onsemiRažotāja kods: MMBFJ177LT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Gate Voltage

25V dc

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Source Gate On-Capacitance

11pF

Dimensions

3.04 x 1.4 x 1.01mm

Height

1.01mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Izcelsmes valsts

China

Produkta apraksts

P-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,101

Katrs (Rulli ir 3000) (bez PVN)

€ 0,122

Katrs (Rulli ir 3000) (Ieskaitot PVN)

ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23

€ 0,101

Katrs (Rulli ir 3000) (bez PVN)

€ 0,122

Katrs (Rulli ir 3000) (Ieskaitot PVN)

ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Gate Voltage

25V dc

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Source Gate On-Capacitance

11pF

Dimensions

3.04 x 1.4 x 1.01mm

Height

1.01mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Izcelsmes valsts

China

Produkta apraksts

P-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more