Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,228
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,276
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
500
€ 0,228
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,276
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
500
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
500 - 950 | € 0,228 | € 11,40 |
1000+ | € 0,197 | € 9,85 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.