N-Channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 onsemi MMBF170LT1G

RS noliktavas nr.: 545-0321Ražotājs: onsemiRažotāja kods: MMBF170LT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Height

0.94mm

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,263

Katrs (Paka ir 10) (bez PVN)

€ 0,318

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 onsemi MMBF170LT1G
Izvēlēties iepakojuma veidu

€ 0,263

Katrs (Paka ir 10) (bez PVN)

€ 0,318

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 onsemi MMBF170LT1G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 90€ 0,263€ 2,63
100 - 190€ 0,252€ 2,52
200 - 740€ 0,21€ 2,10
750 - 1490€ 0,198€ 1,98
1500+€ 0,183€ 1,83

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Height

0.94mm

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more