Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
30 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
250 W
Minimum DC Current Gain
14
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V dc
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,40
Katrs (Tubina ir 30) (bez PVN)
€ 6,534
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 5,40
Katrs (Tubina ir 30) (bez PVN)
€ 6,534
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
30 - 90 | € 5,40 | € 162,00 |
120 - 240 | € 4,50 | € 135,00 |
270 - 480 | € 4,25 | € 127,50 |
510+ | € 3,95 | € 118,50 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
30 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
250 W
Minimum DC Current Gain
14
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V dc
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China