Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 5.3 x 29mm
Izcelsmes valsts
China
Produkta apraksts
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,35
Katrs (Tubina ir 25) (bez PVN)
€ 5,264
Katrs (Tubina ir 25) (Ieskaitot PVN)
25
€ 4,35
Katrs (Tubina ir 25) (bez PVN)
€ 5,264
Katrs (Tubina ir 25) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
25 - 75 | € 4,35 | € 108,75 |
100 - 475 | € 3,75 | € 93,75 |
500 - 975 | € 3,30 | € 82,50 |
1000+ | € 2,80 | € 70,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 5.3 x 29mm
Izcelsmes valsts
China
Produkta apraksts
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.