Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
70 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.28 x 10.28 x 4.82mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,81
Katrs (bez PVN)
€ 0,98
Katrs (Ieskaitot PVN)
1
€ 0,81
Katrs (bez PVN)
€ 0,98
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 9 | € 0,81 |
10 - 99 | € 0,66 |
100 - 499 | € 0,49 |
500+ | € 0,40 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
70 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.28 x 10.28 x 4.82mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.