Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
5
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,35
Katrs (Paka ir 5) (bez PVN)
€ 1,634
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,35
Katrs (Paka ir 5) (bez PVN)
€ 1,634
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 5 | € 1,35 | € 6,75 |
10 - 95 | € 1,10 | € 5,50 |
100 - 495 | € 0,868 | € 4,34 |
500 - 995 | € 0,736 | € 3,68 |
1000+ | € 0,652 | € 3,26 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
5
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm