Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 2.38 x 6.22mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,49
Katrs (Tubina ir 75) (bez PVN)
€ 0,593
Katrs (Tubina ir 75) (Ieskaitot PVN)
75
€ 0,49
Katrs (Tubina ir 75) (bez PVN)
€ 0,593
Katrs (Tubina ir 75) (Ieskaitot PVN)
75
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
75 - 75 | € 0,49 | € 36,75 |
150 - 450 | € 0,346 | € 25,95 |
525 - 975 | € 0,286 | € 21,45 |
1050+ | € 0,24 | € 18,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 2.38 x 6.22mm