Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Height
6.35mm
Width
2.38mm
Maximum Power Dissipation
20 W
Minimum Operating Temperature
-65 °C
Dimensions
6.73 x 2.38 x 6.35mm
Maximum Operating Temperature
+150 °C
Length
6.73mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,579
Katrs (Tubina ir 75) (bez PVN)
€ 0,701
Katrs (Tubina ir 75) (Ieskaitot PVN)
75
€ 0,579
Katrs (Tubina ir 75) (bez PVN)
€ 0,701
Katrs (Tubina ir 75) (Ieskaitot PVN)
75
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
75 - 75 | € 0,579 | € 43,42 |
150 - 300 | € 0,545 | € 40,88 |
375+ | € 0,521 | € 39,08 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Height
6.35mm
Width
2.38mm
Maximum Power Dissipation
20 W
Minimum Operating Temperature
-65 °C
Dimensions
6.73 x 2.38 x 6.35mm
Maximum Operating Temperature
+150 °C
Length
6.73mm