onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS noliktavas nr.: 178-4811Ražotājs: onsemiRažotāja kods: MJD112-1G
brand-logo
Skatīt visu Darlingtona pāri

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

2 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

5 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

4 V

Maximum Collector Base Voltage

100 V

Maximum Collector Emitter Saturation Voltage

3 V

Maximum Collector Cut-off Current

20µA

Height

6.35mm

Width

2.38mm

Maximum Power Dissipation

20 W

Minimum Operating Temperature

-65 °C

Dimensions

6.73 x 2.38 x 6.35mm

Maximum Operating Temperature

+150 °C

Length

6.73mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,579

Katrs (Tubina ir 75) (bez PVN)

€ 0,701

Katrs (Tubina ir 75) (Ieskaitot PVN)

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

€ 0,579

Katrs (Tubina ir 75) (bez PVN)

€ 0,701

Katrs (Tubina ir 75) (Ieskaitot PVN)

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
75 - 75€ 0,579€ 43,42
150 - 300€ 0,545€ 40,88
375+€ 0,521€ 39,08

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

2 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

5 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

4 V

Maximum Collector Base Voltage

100 V

Maximum Collector Emitter Saturation Voltage

3 V

Maximum Collector Cut-off Current

20µA

Height

6.35mm

Width

2.38mm

Maximum Power Dissipation

20 W

Minimum Operating Temperature

-65 °C

Dimensions

6.73 x 2.38 x 6.35mm

Maximum Operating Temperature

+150 °C

Length

6.73mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt