onsemi MJ11032G NPN Darlington Transistor, 50 A 120 V HFE:400, 2-Pin TO-204

RS noliktavas nr.: 774-3209Ražotājs: onsemiRažotāja kods: MJ11032G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

120 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-204

Mounting Type

Through Hole

Pin Count

2

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

400

Maximum Base Emitter Saturation Voltage

4.5 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

3.5 V

Height

8.51mm

Width

26.67mm

Dimensions

38.86 x 26.67 x 8.51mm

Maximum Power Dissipation

300 W

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+200 °C

Length

38.86mm

Produkta apraksts

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 14,10

Katrs (bez PVN)

€ 17,06

Katrs (Ieskaitot PVN)

onsemi MJ11032G NPN Darlington Transistor, 50 A 120 V HFE:400, 2-Pin TO-204

€ 14,10

Katrs (bez PVN)

€ 17,06

Katrs (Ieskaitot PVN)

onsemi MJ11032G NPN Darlington Transistor, 50 A 120 V HFE:400, 2-Pin TO-204
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cena
1 - 9€ 14,10
10 - 99€ 11,40
100 - 199€ 10,70
200 - 499€ 10,40
500+€ 9,70

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

120 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-204

Mounting Type

Through Hole

Pin Count

2

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

400

Maximum Base Emitter Saturation Voltage

4.5 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

3.5 V

Height

8.51mm

Width

26.67mm

Dimensions

38.86 x 26.67 x 8.51mm

Maximum Power Dissipation

300 W

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+200 °C

Length

38.86mm

Produkta apraksts

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more