Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
50 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1200 V
Maximum Emitter Base Voltage
12 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 6.22 x 2.39mm
Produkta apraksts
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,316
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,382
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
€ 0,316
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,382
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
50 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1200 V
Maximum Emitter Base Voltage
12 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 6.22 x 2.39mm
Produkta apraksts
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.