Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
120 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
110 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.58 x 3.86 x 4.58mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,09
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,109
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
1000
€ 0,09
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,109
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
1000
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
120 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
110 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.58 x 3.86 x 4.58mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.