Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,381
Katrs (tiek piegadats lepakojuma) (bez PVN)
€ 0,461
Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)
Industriālais iepakojums (Maiss)
100
€ 0,381
Katrs (tiek piegadats lepakojuma) (bez PVN)
€ 0,461
Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)
Industriālais iepakojums (Maiss)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Maiss |
---|---|---|
100 - 225 | € 0,381 | € 9,52 |
250 - 475 | € 0,331 | € 8,28 |
500+ | € 0,291 | € 7,28 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.