Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
19, 26
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.67 x 4.83 x 16.51mm
Produkta apraksts
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 5,75
€ 1,15 Katrs (Paka ir 5) (bez PVN)
€ 6,96
€ 1,392 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 5,75
€ 1,15 Katrs (Paka ir 5) (bez PVN)
€ 6,96
€ 1,392 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
19, 26
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.67 x 4.83 x 16.51mm
Produkta apraksts
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.