Dual N-Channel MOSFET, 4.7 A, 80 V, 8-Pin SOIC onsemi FDS3890

RS noliktavas nr.: 806-3630Ražotājs: onsemiRažotāja kods: FDS3890
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

80 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.6 W, 2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

4.9mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.575mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Produkta apraksts

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,80

Katrs (Paka ir 5) (bez PVN)

€ 2,178

Katrs (Paka ir 5) (Ieskaitot PVN)

Dual N-Channel MOSFET, 4.7 A, 80 V, 8-Pin SOIC onsemi FDS3890
Izvēlēties iepakojuma veidu

€ 1,80

Katrs (Paka ir 5) (bez PVN)

€ 2,178

Katrs (Paka ir 5) (Ieskaitot PVN)

Dual N-Channel MOSFET, 4.7 A, 80 V, 8-Pin SOIC onsemi FDS3890
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 5€ 1,80€ 9,00
10 - 95€ 1,45€ 7,25
100 - 245€ 1,20€ 6,00
250 - 495€ 1,15€ 5,75
500+€ 0,982€ 4,91

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

80 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.6 W, 2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

4.9mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.575mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Produkta apraksts

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more