Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
124 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.85mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Izcelsmes valsts
Philippines
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,75
Katrs (Paka ir 5) (bez PVN)
€ 3,328
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 2,75
Katrs (Paka ir 5) (bez PVN)
€ 3,328
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 5 | € 2,75 | € 13,75 |
10 - 95 | € 2,25 | € 11,25 |
100 - 245 | € 1,90 | € 9,50 |
250 - 495 | € 1,85 | € 9,25 |
500+ | € 1,75 | € 8,75 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
124 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.85mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Izcelsmes valsts
Philippines