N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181

RS noliktavas nr.: 181-1895Ražotājs: onsemiRažotāja kods: FDMS86181
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.85mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Izcelsmes valsts

Philippines

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,75

Katrs (Paka ir 5) (bez PVN)

€ 3,328

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181
Izvēlēties iepakojuma veidu

€ 2,75

Katrs (Paka ir 5) (bez PVN)

€ 3,328

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 5€ 2,75€ 13,75
10 - 95€ 2,25€ 11,25
100 - 245€ 1,90€ 9,50
250 - 495€ 1,85€ 9,25
500+€ 1,75€ 8,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.85mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Izcelsmes valsts

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more