N-Channel MOSFET, 57 A, 100 V, 8-Pin PQFN8 onsemi FDMC86184

RS noliktavas nr.: 146-3372Ražotājs: onsemiRažotāja kods: FDMC86184
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

21 nC @ 10 V

Height

0.75mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,05

Katrs (Rulli ir 3000) (bez PVN)

€ 1,27

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 57 A, 100 V, 8-Pin PQFN8 onsemi FDMC86184

€ 1,05

Katrs (Rulli ir 3000) (bez PVN)

€ 1,27

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 57 A, 100 V, 8-Pin PQFN8 onsemi FDMC86184
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

21 nC @ 10 V

Height

0.75mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more