N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK onsemi FCU360N65S3R0

RS noliktavas nr.: 178-4246Ražotājs: onsemiRažotāja kods: FCU360N65S3R0
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

IPAK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

6.8mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

2.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

6.3mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,645

Katrs (Tubina ir 75) (bez PVN)

€ 0,78

Katrs (Tubina ir 75) (Ieskaitot PVN)

N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK onsemi FCU360N65S3R0

€ 0,645

Katrs (Tubina ir 75) (bez PVN)

€ 0,78

Katrs (Tubina ir 75) (Ieskaitot PVN)

N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK onsemi FCU360N65S3R0
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

IPAK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

6.8mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

2.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

6.3mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more