Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
144 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,10
Katrs (Tubina ir 800) (bez PVN)
€ 2,541
Katrs (Tubina ir 800) (Ieskaitot PVN)
800
€ 2,10
Katrs (Tubina ir 800) (bez PVN)
€ 2,541
Katrs (Tubina ir 800) (Ieskaitot PVN)
800
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
800 - 800 | € 2,10 | € 1 680,00 |
1600 - 2400 | € 1,75 | € 1 400,00 |
3200 - 4800 | € 1,70 | € 1 360,00 |
5600+ | € 1,65 | € 1 320,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
144 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China