onsemi Dual N/P-Channel MOSFET, 5.5 A, 7 A, 30 V, 8-Pin ECH ECH8661-TL-H
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
5.5 A, 7 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ, 39 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.9mm
Typical Gate Charge @ Vgs
11.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Produkta apraksts
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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€ 22,02
€ 0,881 Katrs (Paka ir 25) (bez PVN)
€ 26,65
€ 1,066 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 22,02
€ 0,881 Katrs (Paka ir 25) (bez PVN)
€ 26,65
€ 1,066 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 25 - 75 | € 0,881 | € 22,02 |
| 100 - 225 | € 0,76 | € 19,00 |
| 250+ | € 0,659 | € 16,48 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
5.5 A, 7 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ, 39 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.9mm
Typical Gate Charge @ Vgs
11.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Produkta apraksts
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products